1 - 2 ? 2000 ixys all rights reserved g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c90 t c = 90 c20a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 i cm = 40 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247ad 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247ad 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.7 2.0 v hiperfast tm igbt v ces = 600 v with diode i c25 = 40 a v ce(sat)typ = 1.7 v t fi(typ) = 100 ns 98566a (3/99) ixgh 20n60bd1 ixgt 20n60bd1 c (tab) g c e to-247 ad (ixgh) to-268 (ixgt) g e c (tab) features international standard packages high frequency igbt and antiparallel fred in one package high current handling capability hiperfast tm hdmos tm process mos gate turn-on -drive simplicity applications uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages space savings (two devices in one package) high power density suitable for surface mounting very low switching losses for high frequency applications easy to mount with 1 screw,to-247 (insulated mounting screw hole) preliminary data ixys reserves the right to change limits, test conditions, and dimensions. .com .com .com
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 9 17 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 150 pf c res 40 pf q g 55 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 20 nc t d(on) 15 ns t ri 25 ns t d(off) 110 200 ns t fi 100 150 ns e off 0.7 1.0 mj t d(on) 15 ns t ri 35 ns e on 0.75 mj t d(off) 220 ns t fi 140 ns e off 1.2 mj r thjc 0.83 k/w r thck to-247 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 30a, v ge = 0 v, t j = 150 c 1.6 v pulse test, t 300 s, duty cycle d 2 % t j = 25 c 2.5 v i rm i f = 30a, v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 100 v t j =100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j = 25 c25 ns r thjc 1.0 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 20n60bd1 ixgt 20n60bd1 to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 .com .com .com
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